NTD4979NT4G

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Manufacturer part number:NTD4979NT4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 9.4A DPAK-3

Case Package:SOT-23

Datasheet:NTD4979NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.38W Ta 26.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.56W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	837pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9.4A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs	16.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	41A
Drain Current-Max (Abs) (ID)	9.4A
Drain-source On Resistance-Max	0.019Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	150A
Avalanche Energy Rating (Eas)	18 mJ
RoHS Status	RoHS Compliant