STP45N65M5

new-10%

Manufacturer part number:STP45N65M5

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 78m Ω @ 19.5A, 10V ±25V 3375pF @ 100V 91nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP45N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	78MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Base Part Number	STP45N
Number of Elements	1
Power Dissipation-Max	210W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Case Connection	DRAIN
Turn On Delay Time	79.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	78m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3375pF @ 100V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Turn-Off Delay Time	79.5 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	140A
Avalanche Energy Rating (Eas)	810 mJ
Nominal Vgs	4 V
Height	15.75mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free