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IRLML6402TRPBF

IRLML6402TRPBF

IRLML6402TRPBF

Infineon Technologies

IRLML6402TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLML6402TRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier Micro3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 65mOhm
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3.7A
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 350 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 48ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 381 ns
Turn-Off Delay Time 588 ns
Continuous Drain Current (ID) -3.7A
Threshold Voltage -550mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 22A
Dual Supply Voltage -20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -550 mV
Height 1.12mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.12179 $0.36537
6,000 $0.11441 $0.68646
15,000 $0.10702 $1.6053
30,000 $0.09817 $2.9451
75,000 $0.09448 $7.086
IRLML6402TRPBF Product Details
IRLML6402TRPBF Description


IRLML6402TRPBF is a kind of P-channel MOSFETs that are designed based on the advanced processing techniques for the purpose of making extremely low on-resistance per silicon area possible. Moreover, IRLML6402TRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All of these make the device more efficient and reliable for use in battery and load management.


IRLML6402TRPBF Features


Thermal resistance
Power dissipation
Fast switching speed
Ruggedized device design
Available in the standard SOT-23 package with the industry's smallest footprint


IRLML6402TRPBF Applications


Portable electronics
PCMCIA cards
Applications
where PCB space is at a premium

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