NTMFS4898NFT3G

new-10%

Manufacturer part number:NTMFS4898NFT3G

Manufacturer:ON Semiconductor

Description:MOSFET NFET SO8FL 30V 120A 3MOHM

Case Package:SOT-23

Datasheet:NTMFS4898NFT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN, 5 Leads
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Power Dissipation-Max	930mW Ta 73.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	73.5W
Case Connection	DRAIN
Turn On Delay Time	17.6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3233pF @ 12V
Current - Continuous Drain (Id) @ 25°C	13.2A Ta 117A Tc
Gate Charge (Qg) (Max) @ Vgs	49.5nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.3 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	117A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0048Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	234A
Avalanche Energy Rating (Eas)	228 mJ
Height	1.1mm
Length	5.1mm
Width	6.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free