FDN335N Description

The ONSEMI FDN335N is a 2.5V N-channel MOSFET that employs the innovative PowerTrench? technology, which has been specifically optimised to minimise on-state resistance while maintaining a low gate charge for excellent switching performance.

FDN335N Features

• 1.7 A, 20 V

• RDS(on) = 0.07 |@ VGS = 4.5 V

• RDS(on) = 0.100 | @ VGS = 2.5 V

• Low gate charge (3.5nC typical).

• High-performance trench technology for highly low RDS(ON)

• High power and current handling capability

FDN335N Applications

• This product is general usage and suitable for many different applications.

• DC/DC converter

• Load Switch