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FDN335N

  • FDN335N
  • FDN335N

FDN335N

FDN335N

ON Semiconductor

FDN335N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDN335N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier CASE 527AG-01
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 70MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.7A
Number of Elements 1
Voltage 20V
Power Dissipation-Max 500mW Ta
Element Configuration Single
Current 17A
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 8.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 25V
Nominal Vgs 800 mV
Height 940μm
Length 2.92mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.12524 $0.37572
6,000 $0.11765 $0.7059
15,000 $0.11006 $1.6509
30,000 $0.10095 $3.0285
75,000 $0.09715 $7.28625
FDN335N Product Details

FDN335N Description


The ONSEMI FDN335N is a 2.5V N-channel MOSFET that employs the innovative PowerTrench? technology, which has been specifically optimised to minimise on-state resistance while maintaining a low gate charge for excellent switching performance.



FDN335N Features


  • 1.7 A, 20 V

  • RDS(on) = 0.07 |@ VGS = 4.5 V

  • RDS(on) = 0.100 | @ VGS = 2.5 V

  • Low gate charge (3.5nC typical).

  • High-performance trench technology for highly low RDS(ON)

  • High power and current handling capability



FDN335N Applications


  • This product is general usage and suitable for many different applications.

  • DC/DC converter

  • Load Switch

 


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