BSS123LT1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
BSS123LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Packaging
Cut Tape (CT)
Published
2005
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Max Power Dissipation
225mW
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
170mA
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
225mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
170mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.17A
Drain-source On Resistance-Max
6Ohm
Drain to Source Breakdown Voltage
100V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
BSS123LT1 Product Details
Description
The BSS123LT1G is an N-channel Power MOSFET with drain-source voltage at 100VDC and drain current at 170mA. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET.