BSC200P03LSGAUMA1

new-10%

Manufacturer part number:BSC200P03LSGAUMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET P-CH 30V 9.9A 8-Pin TDSON EP

Case Package:SOT-23

Datasheet:BSC200P03LSGAUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 63W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id	2.2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	2430pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9.9A Ta 12.5A Tc
Gate Charge (Qg) (Max) @ Vgs	48.5nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Continuous Drain Current (ID)	12.5A
Drain Current-Max (Abs) (ID)	9.9A
Drain-source On Resistance-Max	0.02Ohm
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	30V
RoHS Status	RoHS Compliant