IRLR3103PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLR3103PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1998
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
19mOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
55A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
107W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
69W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
19m Ω @ 33A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
55A Tc
Gate Charge (Qg) (Max) @ Vgs
50nC @ 4.5V
Rise Time
210ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
54 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
55A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
20A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
220A
Avalanche Energy Rating (Eas)
240 mJ
Recovery Time
78 ns
Nominal Vgs
1 V
Height
2.3876mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
IRLR3103PBF Product Details
IRLR3103PBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.
The D-PAK is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.