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IRLR3103PBF

IRLR3103PBF

IRLR3103PBF

Infineon Technologies

IRLR3103PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR3103PBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET®
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 19mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 55A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 107W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 210ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 55A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 240 mJ
Recovery Time 78 ns
Nominal Vgs 1 V
Height 2.3876mm
Length 6.7056mm
Width 6.22mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
IRLR3103PBF Product Details

IRLR3103PBF Description


International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for.

The D-PAK is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.



IRLR3103PBF Features


  • Logic-Level Gate Drive

  • Ultra Low On-Resistance

  • Surface Mount (IRLR3103)

  • Straight Lead (IRLU3103)

  • Advanced Process Technology

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free



IRLR3103PBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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