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IRLR3410TRPBF

IRLR3410TRPBF

IRLR3410TRPBF

Infineon Technologies

IRLR3410TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR3410TRPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 105mOhm
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 17A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 79W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
Rise Time 53ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 2V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 60A
Dual Supply Voltage 100V
Recovery Time 210 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 2 V
Height 2.52mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.26000 $1.26
500 $1.2474 $623.7
1000 $1.2348 $1234.8
1500 $1.2222 $1833.3
2000 $1.2096 $2419.2
2500 $1.197 $2992.5
IRLR3410TRPBF Product Details

IRLR3410TRPBF Description


The IRLR3410TRPBF is a HEXFET? fifth generation single N-channel Power MOSFET that utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides a highly efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques.



IRLR3410TRPBF Features


  • Logic level gate drive

  • Advanced process technology

  • Fully avalanche rating

  • Dynamic dV/dt rating

  • Fast Switching



IRLR3410TRPBF Applications


  • DC motors

  • Inverters

  • SMPS

  • Lighting

  • Load switches 

  • Battery-powered applications


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