AUIRF2903ZSTRL

new-10%

AUIRF2903ZSTRL

Manufacturer part number:AUIRF2903ZSTRL

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 235A D2PAK

Case Package:SOT-23

Datasheet:AUIRF2903ZSTRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	231W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	231W
Case Connection	DRAIN
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6320pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	100ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	37 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	160A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0024Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	1020A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant