IPL60R385CPAUMA1

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Manufacturer part number:IPL60R385CPAUMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 9A 4-Pin VSON

Case Package:SOT-23

Datasheet:IPL60R385CPAUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	40 Weeks
Mounting Type	Surface Mount
Package / Case	4-PowerTSFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	2A (4 Weeks)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	S-PSSO-N4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	385m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain-source On Resistance-Max	0.385Ohm
Pulsed Drain Current-Max (IDM)	27A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	227 mJ
RoHS Status	ROHS3 Compliant