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IRLR3717TRLPBF

IRLR3717TRLPBF

IRLR3717TRLPBF

Infineon Technologies

MOSFET N-CH 20V 120A DPAK

SOT-23

IRLR3717TRLPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 89W Tc
Element Configuration Single
Power Dissipation 89W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2830pF @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 120A
Drain to Source Breakdown Voltage 20V
Input Capacitance 2.83nF
Drain to Source Resistance 4mOhm
Rds On Max 4 mΩ
RoHS Status RoHS Compliant

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