BS108ZL1G

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Manufacturer part number:BS108ZL1G

Manufacturer:ON Semiconductor

Description:BS108ZL1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:BS108ZL1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating	Copper, Silver, Tin
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Box (TB)
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	8Ohm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	250mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 100mA, 2.8V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	250mA Ta
Drive Voltage (Max Rds On,Min Rds On)	2V 2.8V
Vgs (Max)	±20V
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	250mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.25A
Drain to Source Breakdown Voltage	200V
Height	5.33mm
Length	5.2mm
Width	4.19mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free