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NP22N055SHE-E1-AY

NP22N055SHE-E1-AY

NP22N055SHE-E1-AY

Renesas Electronics America

MOSFET N-CH 55V 22A TO-252

SOT-23

NP22N055SHE-E1-AY Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Configuration Single
Power Dissipation-Max 1.2W Ta 45W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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