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IRLR8113TRRPBF

IRLR8113TRRPBF

IRLR8113TRRPBF

Infineon Technologies

MOSFET N-CH 30V 94A DPAK

SOT-23

IRLR8113TRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 89W Tc
Element Configuration Single
Power Dissipation 89W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2920pF @ 15V
Current - Continuous Drain (Id) @ 25°C 94A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 4.5V
Rise Time 3.8ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 17.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.92nF
Drain to Source Resistance 6mOhm
Rds On Max 6 mΩ
Height 2.38mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant

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