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IRLU2705

IRLU2705

IRLU2705

Infineon Technologies

IRLU2705 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLU2705 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 68W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
RoHS Status Non-RoHS Compliant
IRLU2705 Product Details

IRLU2705 Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.



IRLU2705 Features


  • Logic-Level Gate Drive

  • Ultra Low On-Resistance

  • Surface Mount (IRLR2705)

  • Straight Lead (IRLU2705)

  • Advanced Process Technology

  • Fast Switching

  • Fully Avalanche Rated



IRLU2705 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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