NTD20P06L-1G

new-10%

Manufacturer part number:NTD20P06L-1G

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 60V 15.5A IPAK

Case Package:SOT-23

Datasheet:NTD20P06L-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Current Rating	-15.5A
Pin Count	4
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	65W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	65W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15.5A Ta
Gate Charge (Qg) (Max) @ Vgs	26nC @ 5V
Rise Time	90ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	28 ns
Continuous Drain Current (ID)	15.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	15A
Drain-source On Resistance-Max	0.15Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	50A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free