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IRLZ44ZSTRRPBF

IRLZ44ZSTRRPBF

IRLZ44ZSTRRPBF

Infineon Technologies

MOSFET N-CH 55V 51A D2PAK

SOT-23

IRLZ44ZSTRRPBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 80W Tc
Element Configuration Single
Power Dissipation 80W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 5V
Rise Time 160ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 51A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Input Capacitance 1.62nF
Drain to Source Resistance 13.5mOhm
Rds On Max 13.5 mΩ
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
RoHS Status RoHS Compliant

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