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IRS2008MPBFAUMA1

IRS2008MPBFAUMA1

IRS2008MPBFAUMA1

Infineon Technologies

Surface Mount Tape & Reel (TR) Active Gate Drivers ICs CMOS 1 200V V 14-VFQFN Exposed Pad Half-Bridge

SOT-23

IRS2008MPBFAUMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Package / Case 14-VFQFN Exposed Pad
Operating Temperature -40°C~125°C TA
Packaging Tape & Reel (TR)
Part Status Active
Voltage - Supply 10V~20V
Input Type CMOS
Rise / Fall Time (Typ) 70ns 30ns
Channel Type Synchronous
Number of Drivers 1
Driven Configuration Half-Bridge
Gate Type IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink) 290mA 600mA
Logic Voltage - VIL, VIH 0.8V 2.5V
High Side Voltage - Max (Bootstrap) 200V
IRS2008MPBFAUMA1 Product Details

IRS2008MPBFAUMA1 Overview


For greater flexibility, its 14-VFQFN Exposed Pad package is used.Gate drivers is package in Tape & Reel (TR) case.Configuration is based on 1 drivers.Ideally, it should be mounted in the direction of Surface Mount.When the supply voltage is 10V~20V it is able to demonstrate its superiority.This gate type has a IGBT, N-Channel MOSFET design.-40°C~125°C TA is the allowed temperature range for this device.The input type is CMOS.A boot strap voltage of 200V is the maximum possible high-side voltage.

IRS2008MPBFAUMA1 Features


Embedded in the Tape & Reel (TR) package
1 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 200V

IRS2008MPBFAUMA1 Applications


There are a lot of Infineon Technologies IRS2008MPBFAUMA1 gate drivers applications.

  • Uninterruptible Power Supplies (UPS)
  • Dual-Battery Systems
  • Smart Phones
  • Head-up and Head mounted displays
  • PCMCIA applications
  • Isolated Gate Driver Supplies
  • Solar inverters
  • Industrial Power Supplies
  • Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
  • Isolated switch mode power supplies (SMPS)

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