MMBT3904LT3XT Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.Product comes in the supplier's device package SOT-23-3.The device exhibits a collector-emitter breakdown at 40V.During maximum operation, collector current can be as low as 200mA volts.
MMBT3904LT3XT Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the supplier device package of SOT-23-3
MMBT3904LT3XT Applications
There are a lot of Infineon Technologies MMBT3904LT3XT applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
