MMBT3904LT3XT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
MMBT3904LT3XT Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
330mW
Frequency
300MHz
Base Part Number
MMBT3904
Number of Elements
1
Polarity
NPN
Power Dissipation
330mW
Power - Max
330mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
RoHS Status
ROHS3 Compliant
MMBT3904LT3XT Product Details
MMBT3904LT3XT Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 6V can achieve high levels of efficiency.Product comes in the supplier's device package SOT-23-3.The device exhibits a collector-emitter breakdown at 40V.During maximum operation, collector current can be as low as 200mA volts.
MMBT3904LT3XT Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 6V the supplier device package of SOT-23-3
MMBT3904LT3XT Applications
There are a lot of Infineon Technologies MMBT3904LT3XT applications of single BJT transistors.