BD679ASTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD679ASTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
BD679
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
2.8V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
Height
11mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.370800
$16.3708
10
$15.444151
$154.44151
100
$14.569954
$1456.9954
500
$13.745239
$6872.6195
1000
$12.967207
$12967.207
BD679ASTU Product Details
BD679ASTU Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.8V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.8V @ 40mA, 2A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 10MHz.A breakdown input voltage of 100V volts can be used.When collector current reaches its maximum, it can reach 4A volts.
BD679ASTU Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2.8V the vce saturation(Max) is 2.8V @ 40mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 10MHz
BD679ASTU Applications
There are a lot of ON Semiconductor BD679ASTU applications of single BJT transistors.