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SGB15N60HSATMA1

  • SGB15N60HSATMA1
  • SGB15N60HSATMA1

SGB15N60HSATMA1

SGB15N60HSATMA1

Infineon Technologies

SGB15N60HSATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SGB15N60HSATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 138W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 27A
Test Condition 400V, 15A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 15A
IGBT Type NPT
Gate Charge 80nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 13ns/209ns
Switching Energy 530μJ
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.04000 $1.04
500 $1.0296 $514.8
1000 $1.0192 $1019.2
1500 $1.0088 $1513.2
2000 $0.9984 $1996.8
2500 $0.988 $2470
SGB15N60HSATMA1 Product Details

SGB15N60HSATMA1 Description


The SGB15N60HSATMA1 is a High-Speed IGBT in NPT technology.



SGB15N60HSATMA1 Features


  • 30% lower Eoff compared to the previous generation

  • Short circuit withstand time – 10 μs

  • Designed for operation above 30 kHz

  • NPT-Technology for 600V applications offers:

    - parallel switching capability

    - moderate Eoff increase with temperature

    - very tight parameter distribution

  • High ruggedness, temperature-stable behaviour

  • Pb-free lead plating; RoHS compliant

  • Qualified according to JEDEC1 for target applications



SGB15N60HSATMA1 Applications


  • Industrial applicaitons


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