SGW20N60FKSA1

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Manufacturer part number:SGW20N60FKSA1

Manufacturer:Infineon Technologies

Description:SGW20N60FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SGW20N60FKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	179W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Turn On Time	66 ns
Test Condition	400V, 20A, 16 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 20A
Turn Off Time-Nom (toff)	313 ns
IGBT Type	NPT
Gate Charge	100nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	36ns/225ns
Switching Energy	440μJ (on), 330μJ (off)
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
240	$3.16996	$760.7904

SGW20N60FKSA1 Description

The SGW20N60FKSA1 is a Fast IGBT in NPT-technology. With regard to Hard Switching Topologies and Soft Switching/Resonant Topologies, Infineon offers a broad IGBT portfolio. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

SGW20N60FKSA1 Features

NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
75% lower Eoff compared to previous generation combined with low conduction losses
Short circuit withstand time – 10 μs
Designed for:

- Motor controls

- Inverter