FGH80N60FD2TU

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Manufacturer part number:FGH80N60FD2TU

Manufacturer:ON Semiconductor

Description:FGH80N60FD2TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH80N60FD2TU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	290W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	61 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	600V
Turn On Time	74 ns
Test Condition	400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Turn Off Time-Nom (toff)	201 ns
IGBT Type	Field Stop
Gate Charge	120nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25°C	21ns/126ns
Switching Energy	1mJ (on), 520μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	100ns
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant