APT50GN60BG

new-10%

Manufacturer part number:APT50GN60BG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT50GN60BG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	366W
Current Rating	107A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	107A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	45 ns
Test Condition	400V, 50A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 50A
Continuous Collector Current	107A
Turn Off Time-Nom (toff)	400 ns
IGBT Type	Trench Field Stop
Gate Charge	325nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	20ns/230ns
Switching Energy	1185μJ (on), 1565μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free