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SI3443DVTRPBF

SI3443DVTRPBF

SI3443DVTRPBF

Infineon Technologies

SI3443DVTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SI3443DVTRPBF Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package Micro6™(TSOP-6)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Resistance 65mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1079pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.4A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 33ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 72 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) -4.4A
Threshold Voltage -1.2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Input Capacitance 1.079nF
Drain to Source Resistance 65mOhm
Rds On Max 65 mΩ
Nominal Vgs -1.2 V
Height 990.6μm
Length 3.0988mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
SI3443DVTRPBF Product Details

SI3443DVTRPBF Description


SI3443DVTRPBF is a kind of P-channel HEXFET? power MOSFET provided by Infineon Technologies. It is able to provide extremely low on-resistance per silicon area based on advanced processing techniques. As a result, it is reliable and efficient for electronic engineers to use in battery and load management applications.  Power MOSFET SI3443DVTRPBF is available in the TSOP-6 package, making it ideally suited for applications where printed circuit board space is at a premium.



SI3443DVTRPBF Features


  • Low gate charge

  • Extremely low on-resistance per silicon area

  • Advanced processing techniques

  • Available in the TSOP-6 package

  • Unique thermal design and RDS(on) reduction



SI3443DVTRPBF Applications


  • Battery and load management


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