SIGC07T60NCX7SA1                            Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

SIGC07T60NCX7SA1                           Features

? Low VCE (ON) Trench IGBT Technology

? Low Switching Losses

? Maximum Junction Temperature 175 °C

? 5 μS short circuit SOA

? Square RBSOA

? 100% of The Parts Tested for ILM

SIGC07T60NCX7SA1                           Applications

· drives