SIGC07T60SNCX1SA4

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Manufacturer part number:SIGC07T60SNCX1SA4

Manufacturer:Infineon Technologies

Description:SIGC07T60SNCX1SA4 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SIGC07T60SNCX1SA4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die
Operating Temperature	-55°C~150°C TJ
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	6A
Test Condition	400V, 6A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 6A
IGBT Type	NPT
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	24ns/248ns
RoHS Status	ROHS3 Compliant

SIGC07T60SNCX1SA4 Description

SIGC07T60SNCX1SA4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC07T60SNCX1SA4 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC07T60SNCX1SA4 has the common source configuration.

SIGC07T60SNCX1SA4 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

SIGC07T60SNCX1SA4 Applications

ISM applications

DC large signal applications

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