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SIGC100T65R3EX1SA2

  • SIGC100T65R3EX1SA2
  • SIGC100T65R3EX1SA2

SIGC100T65R3EX1SA2

SIGC100T65R3EX1SA2

Infineon Technologies

SIGC100T65R3EX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC100T65R3EX1SA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -40°C~175°C TJ
Published 2016
Series TrenchStop™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 650V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Dual Supply Voltage 650V
Current - Collector (Ic) (Max) 200A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 600A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC100T65R3EX1SA2 Product Details

SIGC100T65R3EX1SA2 Description


SIGC100T65R3EX1SA2 is a single IGBT with a break down voltage of 600V from Infineon Technologies. SIGC100T65R3EX1SA2 operates between -55°C~150°C TJ, and its maximum collector current is 40A. The SIGC100T65R3EX1SA2 has three pins and it is available in Tube packaging way. SIGC100T65R3EX1SA2 has a 1350V Voltage - Collector Emitter Breakdown (Max) value.



SIGC100T65R3EX1SA2 Features


  • 600V NPT technology

  • 100μm chip

  • short circuit prove

  • positive temperature coefficient

  • easy paralleling



SIGC100T65R3EX1SA2 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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