NGB8206NT4

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Manufacturer part number:NGB8206NT4

Manufacturer:ON Semiconductor

Description:NGB8206NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGB8206NT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn80Pb20)
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	350V
Max Power Dissipation	150W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	NGB8206
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	8000ns
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation	150W
Case Connection	COLLECTOR
Input Type	Logic
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	390V
Turn On Time	6500 ns
Test Condition	300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff)	18500 ns
Current - Collector Pulsed (Icm)	50A
Td (on/off) @ 25°C	-/5μs
Gate-Emitter Voltage-Max	15V
Fall Time-Max (tf)	14000ns
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead