STGWA25S120DF3 Description

This STGWA25S120DF3 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGWA25S120DF3 is part of the S series of 1200 V IGBTs which is tailored to maximize the efficiency of low-frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor STGWA25S120DF3 is in the TO-247 package with 375W power dissipation.

STGWA25S120DF3 Features

10 us of short-circuit withstand time

VCE(sat)= 1.6 V (typ.)@lc= 25 A

Tight parameter distribution

Safer paralleling

Low thermal resistance 

Soft and fast recovery antiparallel diode

STGWA25S120DF3 Applications

Industrial drives

UPS

Solar

Welding