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SIGC121T60NR2CX7SA1

SIGC121T60NR2CX7SA1

SIGC121T60NR2CX7SA1

Infineon Technologies

SIGC121T60NR2CX7SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC121T60NR2CX7SA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -55°C~150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 150A
Test Condition 300V, 150A, 1.5Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 150A
IGBT Type NPT
Current - Collector Pulsed (Icm) 450A
Td (on/off) @ 25°C 125ns/225ns
RoHS Status ROHS3 Compliant
SIGC121T60NR2CX7SA1 Product Details

SIGC121T60NR2CX7SA1 Description


SIGC121T60NR2CX7SA1 is a single IGBT with a break down voltage of 600V from Infineon Technologies. SIGC121T60NR2CX7SA1 operates between -55°C~150°C TJ, and its maximum collector current is 150A. The SIGC121T60NR2CX7SA1 has three pins and it is available in Die packaging way. SIGC121T60NR2CX7SA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.



SIGC121T60NR2CX7SA1 Features


  • 600V NPT technology 100μm chip

  • positive temperature coefficient

  • easy paralleling

  • integrated gate resistor



SIGC121T60NR2CX7SA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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