SIGC14T60NCX1SA7 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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SIGC14T60NCX1SA7 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Published
2016
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
S-XUUC-N2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Dual Supply Voltage
600V
Current - Collector (Ic) (Max)
15A
Turn On Time
28 ns
Test Condition
300V, 15A, 18 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 15A
Turn Off Time-Nom (toff)
135 ns
IGBT Type
NPT
Current - Collector Pulsed (Icm)
45A
Td (on/off) @ 25°C
21ns/110ns
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SIGC14T60NCX1SA7 Product Details
SIGC14T60NCX1SA7 Description
SIGC14T60NCX1SA7 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC14T60NCX1SA7 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC14T60NCX1SA7 has the common source configuration.