SIGC14T60NCX1SA7 Description
SIGC14T60NCX1SA7 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SIGC14T60NCX1SA7 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SIGC14T60NCX1SA7 has the common source configuration.
SIGC14T60NCX1SA7 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SIGC14T60NCX1SA7 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
