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SIGC25T60NCX1SA5

SIGC25T60NCX1SA5

SIGC25T60NCX1SA5

Infineon Technologies

SIGC25T60NCX1SA5 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

SIGC25T60NCX1SA5 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2016
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-XUUC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 30A
Turn On Time 29 ns
Test Condition 300V, 30A, 8.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 135 ns
IGBT Type NPT
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 21ns/110ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SIGC25T60NCX1SA5 Product Details

SIGC25T60NCX1SA5 Description


SIGC25T60NCX1SA5 belongs to the family of IGBT chips provided by Infineon Technologies. It is designed based on 600V NPT technology to realize a positive temperature coefficient, and easy paralleling. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



SIGC25T60NCX1SA5 Features


600V NPT technology

100μm chip

Positive temperature coefficient

Easy paralleling

Package: sawn on foil



SIGC25T60NCX1SA5 Applications


Drives


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