IRG4CC30FB Description

The IRG4CC30FB is an IGBT Die in Wafer Form. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.

IRG4CC30FB Features

• 600 V

• Size 3

• Fast Speed

• 6" Wafer

IRG4CC30FB Applications

• Consumer electronics

• Industrial technology

• The energy sector

• Aerospace electronic devices

• Transportation