IXGH56N60B3

new-10%

Manufacturer part number:IXGH56N60B3

Manufacturer:IXYS

Description:DISC IGBT PT-MID FREQUENCY TO-24

Case Package:SOT-23

Datasheet:IXGH56N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	1 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2012
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	330W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	41ns
JEDEC-95 Code	TO-247AD
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	130A
Power Dissipation-Max (Abs)	330W
Turn On Time	63 ns
Test Condition	480V, 44A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 44A
Turn Off Time-Nom (toff)	385 ns
IGBT Type	PT
Gate Charge	138nC
Current - Collector Pulsed (Icm)	350A
Td (on/off) @ 25°C	26ns/155ns
Switching Energy	1.3mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	165ns
RoHS Status	RoHS Compliant