SIGC42T60UNX7SA1 Description

The SIGC42T60UNX7SA1 is a High Speed IGBT Chip in NPT-technology. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.

SIGC42T60UNX7SA1 Features

• Short circuit prove

• Positive temperature coefficient easy paralleling

• Low Eoff

• 600V NPT technology

• 100μm chip

SIGC42T60UNX7SA1 Applications

• Welding

• PFC

• UPS

• AC and DC motor drives

• Chopper and inverters