IRG7CH73UEF-R Description

IRG7CH73UEF-R is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its square RBSOA, rugged transient performance can be ensured. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient and integrated gate resistor. With low VCE(ON) and switching Losses, the IRG7CH73UEF-R IGBT is able to provide high efficiency in a wide range of applications.

IRG7CH73UEF-R Features

Low VCE(ON) and switching Losses

Square RBSOA 

Maximum junction temperature 175°C

Positive VCE (ON) temperature coefficient

Integrated gate resistor

IRG7CH73UEF-R Applications

Medium power drives

HEV inverter

UPS

Welding 

Induction heating