IRG4BC20K-S Description

IRG4BC20K-S is a 600V insulated gate bipolar transistor.  As a Freewheeling Diode, we recommend our  HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the  Diode and IGBT. The latest generation 4 IGBTs offer the highest power density motor controls possible. The Operating and Storage Temperature Range is between -55 and 150℃. And the Switch IRG4BC20K-S is in the TO-220A package with 60W power dissipation.

IRG4BC20K-S Features

High short circuit rating optimized for motor control,  tsc =10μs,  @360V  VCE (start),  TJ = 125°C,  VGE = 15V

Combines low conduction losses with a high switching speed

The latest generation design provides tighter parameter distribution and higher efficiency than the previous  generation

Continuous Collector Current: 16A

Short Circuit Withstand Time: 10μs

Gate-to-Emitter  Voltage: ±20V

IRG4BC20K-S Applications

Automotive 

Advanced driver assistance systems (ADAS) 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Home theater & entertainment