IRG4BC20F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC20F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
FAST SWITCHING
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
60W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
16A
Turn On Time
41 ns
Test Condition
480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 9A
Turn Off Time-Nom (toff)
640 ns
Gate Charge
27nC
Current - Collector Pulsed (Icm)
64A
Td (on/off) @ 25°C
24ns/190ns
Switching Energy
70μJ (on), 600μJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$3.27920
$163.96
IRG4BC20F Product Details
IRG4BC20F Description
IRG4BC20F is a single N-channel IGBT power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 600V. The operating temperature of IRG4BC20F is -55°C~150°C TJ and its maximum power dissipation are 60W. IRG4BC20F has 3 pins and it is available in TO-220-3 packaging way. The FET Type of IRG4BC20F is N-channel and its Current Rating is 16A.
IRG4BC20F Features
Ge generation 4 IGBTs offer the highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent industry-standa