SKW20N60FKSA1                      Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

SKW20N60FKSA1                          Features

· 75% lower Eoff compared to previous generation

combined with low conduction losses

· Short circuit withstand time – 10 ms

· Designed for:

- Motor controls

- Inverter

· NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

· Very soft, fast recovery anti-parallel Emitter Controlled

Diode

· Pb-free lead plating; RoHS compliant

· Qualified according to JEDEC1

for target applications

SKW20N60FKSA1                      Applications

? Appliance Drives

? Inverters

? UPS