ISL9V3036S3ST

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Manufacturer part number:ISL9V3036S3ST

Manufacturer:ON Semiconductor

Description:ISL9V3036S3ST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:ISL9V3036S3ST Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	EcoSPARK®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	360V
Max Power Dissipation	150W
Terminal Form	GULL WING
Current Rating	21A
Base Part Number	ISL9V3036
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	7000ns
Element Configuration	Single
Power Dissipation	150W
Case Connection	COLLECTOR
Input Type	Logic
Turn On Delay Time	700 ns
Clamping Voltage	360V
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	4.8 μs
Collector Emitter Voltage (VCEO)	1.58V
Max Collector Current	21A
Collector Emitter Breakdown Voltage	360V
Max Breakdown Voltage	360V
Turn On Time	2800 ns
Test Condition	300V, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	1.6V @ 4V, 6A
Turn Off Time-Nom (toff)	7600 ns
Gate Charge	17nC
Td (on/off) @ 25°C	-/4.8μs
Gate-Emitter Voltage-Max	12V
Gate-Emitter Thr Voltage-Max	2.2V
Fall Time-Max (tf)	15000ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free