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APT15GP90BDQ1G

APT15GP90BDQ1G

APT15GP90BDQ1G

Microsemi Corporation

IGBT 900V 43A 250W TO247

SOT-23

APT15GP90BDQ1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 900V
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 43A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 43A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 900V
Turn On Time 23 ns
Test Condition 600V, 15A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 15A
Turn Off Time-Nom (toff) 170 ns
IGBT Type PT
Gate Charge 60nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 9ns/33ns
Switching Energy 200μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
83 $6.67446 $553.98018

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