SMBT2222AE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
SMBT2222AE6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
330mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
600mA
Frequency
300MHz
Base Part Number
MBT2222A
Number of Elements
1
Configuration
SINGLE
Power Dissipation
330mW
Transistor Application
SWITCHING
Halogen Free
Not Halogen Free
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
35
Max Junction Temperature (Tj)
150°C
Turn Off Time-Max (toff)
285ns
Height
1.1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.04350
$0.1305
6,000
$0.03824
$0.22944
15,000
$0.03298
$0.4947
30,000
$0.03123
$0.9369
75,000
$0.02948
$2.211
150,000
$0.02655
$3.9825
SMBT2222AE6327HTSA1 Product Details
SMBT2222AE6327HTSA1 Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 600mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
SMBT2222AE6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 600mA a transition frequency of 300MHz
SMBT2222AE6327HTSA1 Applications
There are a lot of Infineon Technologies SMBT2222AE6327HTSA1 applications of single BJT transistors.