SMBTA 42 E6433 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
SMBTA 42 E6433 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Reach Compliance Code
unknown
Base Part Number
MBTA42
Configuration
Single
Power - Max
360mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
50MHz
Frequency - Transition
70MHz
Power Dissipation-Max (Abs)
0.36W
RoHS Status
RoHS Compliant
SMBTA 42 E6433 Product Details
SMBTA 42 E6433 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 30mA 10V.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).There is a transition frequency of 50MHz in the part.Detection of Collector Emitter Breakdown at 300V maximal voltage is present.
SMBTA 42 E6433 Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA a transition frequency of 50MHz
SMBTA 42 E6433 Applications
There are a lot of Infineon Technologies SMBTA 42 E6433 applications of single BJT transistors.