UMT3904T106 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 200mA to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 300MHz.Breakdown input voltage is 40V volts.The maximum collector current is 200mA volts.
UMT3904T106 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
UMT3904T106 Applications
There are a lot of ROHM Semiconductor UMT3904T106 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
