SPB04N60S5ATMA1

new-10%

Manufacturer part number:SPB04N60S5ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:SPB04N60S5ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	4.5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Turn On Delay Time	55 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	950m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	5.5V @ 200μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	22.9nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.95Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	9A
RoHS Status	RoHS Compliant
Lead Free	Lead Free