SPB08P06PGATMA1

new-10%

Manufacturer part number:SPB08P06PGATMA1

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 60V 8.8A TO-263

Case Package:SOT-23

Datasheet:SPB08P06PGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-8.8A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Turn On Delay Time	16 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 6.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.8A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	46ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	8.8A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	-60V
Avalanche Energy Rating (Eas)	70 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead