SPB10N10 G

new-10%

Manufacturer part number:SPB10N10 G

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 10.3A D2PAK

Case Package:SOT-23

Datasheet:SPB10N10 G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3-2
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	SIPMOS®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	50W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	4V @ 21μA
Input Capacitance (Ciss) (Max) @ Vds	426pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10.3A Tc
Gate Charge (Qg) (Max) @ Vgs	19.4nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V