SPD30N03S2L20GBTMA1

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Manufacturer part number:SPD30N03S2L20GBTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 30A

Case Package:SOT-23

Datasheet:SPD30N03S2L20GBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	compliant
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	60W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	20m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	2V @ 23μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	30A
Drain-source On Resistance-Max	0.031Ohm
Pulsed Drain Current-Max (IDM)	120A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	70 mJ